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| AP4578M Advanced Power Electronics Corp. Simple Drive Requirement Lower Gate Charge Fast Switching Performance D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 G2 60V 64m 4.5A -60V 125m -3A SO-8 SO-8 S2 G1 S2 S1 G1 S1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID P-CH BVDSS RDS(ON) ID D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 60 20 4.5 3.6 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -60 20 -3 -2.4 -20 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 201122041 AP4578M N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=4A VGS=4.5V, ID=2A Min. 60 1 - Typ. 0.05 55 65 7 9 3 4 9 5 22 7 730 80 60 1.8 Max. Units 64 80 3 1 25 100 17 1170 2.7 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=20V ID=4A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V IS=4A, VGS=0V dI/dt=100A/s Min. - Typ. 28 39 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP4578M P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T oC) j=25 Drain-Source Leakage Current (T oC) j=70 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-3A VGS=-4.5V, ID=-2A VDS=VGS, ID=-250uA VDS=-10V, ID=-2A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=20V ID=-3A VDS=-48V VGS=-4.5V VDS=-30V ID=-1A RG=3.3,VGS=-10V RD=30 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Min. -60 -1 - Typ. -0.04 100 120 5 12 2 6 10 6 33 6 905 90 75 12 Max. Units 125 150 -3 -1 -25 100 20 1450 18 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V IS=-3A, VGS=0V dI/dt=-100A/s Min. - Typ. 36 55 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP4578M N-Channel 25 25 T A = 25 o C 20 10V 7.0V 20 T A =150 o C 10V 7.0V ID , Drain Current (A) ID , Drain Current (A) 15 15 10 10 V G =3.0V 5 5 V G =3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.6 ID=2A 70 T A =25 o C Normalized RDS(ON) 1.4 I D =4A V G =10V RDS(ON) (m ) 65 1.2 60 1.0 55 -6.3 -5 0.8 50 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 4 3 1.5 2 T j =150 o C T j =25 o C Normalized VGS(th) (V) IS(A) 1 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4578M N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) C iss 10 ID=4A V DS = 48 V 8 C (pF) 6 100 C oss C rss 4 2 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0 5 Normalized Thermal Response (Rthja) 02 10 100us 1ms 10ms 0.1 01 0 05 ID (A) 1 0 02 PDM t T Single Pulse 100 0 01 0.01 0.1 T A =25 o C Single Pulse Duty factor = t/T Peak T = P x R +T 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 25 V DS =5V 20 VG T j =125 o C ID , Drain Current (A) T j =25 o C 15 QG 4.5V QGS QGD 10 5 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP4578M P-Channel 20 20 T A = 25 o C -ID , Drain Current (A) 15 -10V -ID , Drain Current (A) T A =150 C 15 o -10V 10 10 V 5 3 0V 5 V 3 0V 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 170 2.0 I D = -2 A 160 1.8 T A =25 C 1.6 o I D = -3 A V G = - 10V RDS(ON) (m ) Normalized R DS(ON) 2 4 6 8 10 1.4 150 1.2 1.0 140 0.8 130 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 3 1.5 2 o T j =150 C 1 T j =25 o C Normalized -VGS(th) (V) -IS(A) 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4578M P-Channel f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 I D =-3A V DS =-48V 8 1000 C iss 6 C (pF) 4 100 C C rss 2 0 0.0 5.0 10.0 15.0 20.0 25.0 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 100us -ID (A) Normalized Thermal Response (Rthja) 0.1 1 P DM 0.01 0.1 T A =25 o C t T Duty factor = t/T Peak Tj = P DM x Rthja + Ta Rthja = 135/W 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 -ID , Drain Current (A) V DS =-5V 15 VG QG -4.5V T j =25 o C T j =150 o C 10 QGS QGD 5 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform |
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